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Transport properties of a 3D topological insulator based on a strained high-mobility HgTe film.
Kozlov, D A; Kvon, Z D; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A; Weiss, D.
Afiliação
  • Kozlov DA; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia and Novosibirsk State University, Novosibirsk 630090, Russia.
  • Kvon ZD; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia and Novosibirsk State University, Novosibirsk 630090, Russia.
  • Olshanetsky EB; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
  • Mikhailov NN; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
  • Dvoretsky SA; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
  • Weiss D; Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.
Phys Rev Lett ; 112(19): 196801, 2014 May 16.
Article em En | MEDLINE | ID: mdl-24877958
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article
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PubMed Links

Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article