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High-performance few-layer Mo-doped ReSe2 nanosheet photodetectors.
Yang, Shengxue; Tongay, Sefaattin; Yue, Qu; Li, Yongtao; Li, Bo; Lu, Fangyuan.
Afiliação
  • Yang S; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China.
  • Tongay S; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, United States.
  • Yue Q; College of Science, National University of Defense Technology, Changsha 410073, China.
  • Li Y; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China.
  • Li B; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China.
  • Lu F; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China.
Sci Rep ; 4: 5442, 2014 Jun 25.
Article em En | MEDLINE | ID: mdl-24962077
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article
Texto completo
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PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article