Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime.
Org Electron
; 14(5): 1344-1350, 2013 May.
Article
em En
| MEDLINE
| ID: mdl-25132811
ABSTRACT
The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 µm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D∗ ≈ 7 × 107 Jones at 1.55 µm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts.
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MEDLINE
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En
Ano de publicação:
2013
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Article