Growth, structure and morphology of epitaxial Fe(0 0 1) films on GaAs(0 0 1)c(4 × 4).
J Phys Condens Matter
; 27(3): 036001, 2015 Jan 28.
Article
em En
| MEDLINE
| ID: mdl-25538047
ABSTRACT
We studied epitaxy, growth, structure and morphology of thin Fe(0 0 1) films on the As-rich GaAs(0 0 1)-c(4 × 4) surface, deposited by molecular beam epitaxy at growth temperatures between room temperature and 250° C. Electron and x-ray diffraction (XRD) techniques evidence epitaxial growth with Fe(0 0 1)[1 0 0] ⥠GaAs(0 0 1)[1 0 0]. The residual strain derived from the XRD results is consistent with recent stress measurements. Cross-sectional transmission electron microscopy reveals an abrupt interface for room-temperature films and the formation of a â¼10 nm thick crystalline Fe-Ga-As intermediate layer at 250° C. The dependence of the surface morphology on growth temperature and annealing evidences a kinetic roughening of the Fe surface at growth temperatures of 100-200° C due to the presence of step-edge barriers.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2015
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Article