High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits.
Nanoscale
; 7(25): 10954-62, 2015 Jul 07.
Article
em En
| MEDLINE
| ID: mdl-26061485
ABSTRACT
Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 µA µm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 µS µm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V(-1) s(-1) (12,300 cm(2) V(-1) s(-1)) with the highest value over 24,000 cm(2) V(-1) s(-1) (20,000 cm(2) V(-1) s(-1)) obtained in flexible GFETs. Ambipolar radio-frequency circuits, frequency doubler, were constructed based on the high performed flexible GFET, which show record high output power spectra purity (â¼97%) and high conversion gain of -13.6 dB. Bending measurements show the flexible GFETs are able to work under modest strain. These results show that flexible GFETs are a very promising option for future flexible radio-frequency electronics.
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MEDLINE
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En
Ano de publicação:
2015
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Article