Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho.

Afiliação

Jang J; Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.
Lee T; Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.

ACS Nano ; 9(7): 7515-22, 2015 Jul 28.

Article em En | MEDLINE | ID: mdl-26083550

Palavras-chave

flexible and ambipolar transistor; graphene/pentacene barristor; high mobility and on/off ratio; ion-gel gate dielectric; negative differential resistance

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article