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Low-Dimensional Topological Crystalline Insulators.
Wang, Qisheng; Wang, Feng; Li, Jie; Wang, Zhenxing; Zhan, Xueying; He, Jun.
Afiliação
  • Wang Q; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Wang F; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Li J; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Wang Z; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Zhan X; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • He J; National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Small ; 11(36): 4613-24, 2015 Sep.
Article em En | MEDLINE | ID: mdl-26174151
Topological crystalline insulators (TCIs) are recently discovered topological phase with robust surface states residing on high-symmetry crystal surfaces. Different from conventional topological insulators (TIs), protection of surface states on TCIs comes from point-group symmetry instead of time-reversal symmetry in TIs. The distinct properties of TCIs make them promising candidates for the use in novel spintronics, low-dissipation quantum computation, tunable pressure sensor, mid-infrared detector, and thermoelectric conversion. However, similar to the situation in TIs, the surface states are always suppressed by bulk carriers, impeding the exploitation of topology-induced quantum phenomenon. One effective way to solve this problem is to grow low-dimensional TCIs which possess large surface-to-volume ratio, and thus profoundly increase the carrier contribution from topological surface states. Indeed, through persistent effort, researchers have obtained unique quantum transport phenomenon, originating from topological surface states, based on controllable growth of low-dimensional TCIs. This article gives a comprehensive review on the recent progress of controllable synthesis and topological surface transport of low-dimensional TCIs. The possible future direction about low-dimensional TCIs is also briefly discussed at the end of this paper.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article