High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-µm telecommunication band.

We theoretically demonstrate high quality(Q)-factor micropillar cavities at 1.55-µm wavelength based on Si/SiO(2)-InP hybrid structure. An adiabatic design in distributed Bragg reflectors (DBRs) improves Q-factor for upto 3 orders of magnitude, while reducing the diameter to sub-micrometer. A moderate Q-factor of ~3000 and a Purcell factor of ~200 are realized by only 2 taper segments and fewer conventional DBR pairs, enabling single photon generation at GHz rate. As the taper segment number is increased, Q-factor can be boosted to ~10(5)-10(6), enabling coherent exchange between the emitter and the optical mode at 1.55 µm, which is applicable in quantum information networks.