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Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors.
Lin, Yen-Fu; Xu, Yong; Lin, Che-Yi; Suen, Yuen-Wuu; Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji; Tsukagoshi, Kazuhito.
Afiliação
  • Lin YF; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Xu Y; Department of Energy and Materials Engineering, Dongguk University, Seoul, 100-715, Korea.
  • Lin CY; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Suen YW; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Yamamoto M; WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
  • Nakaharai S; WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
  • Ueno K; Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan.
  • Tsukagoshi K; WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
Adv Mater ; 27(42): 6612-9, 2015 Nov.
Article em En | MEDLINE | ID: mdl-26414685
ABSTRACT
Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article