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Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation.
Wang, Jingli; Li, Songlin; Zou, Xuming; Ho, Johnny; Liao, Lei; Xiao, Xiangheng; Jiang, Changzhong; Hu, Weida; Wang, Jianlu; Li, Jinchai.
Afiliação
  • Wang J; Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Li S; WPI Center for Materials Nanoarchitechtonics and International Center for Young Scientist, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan.
  • Zou X; Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Ho J; Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, China.
  • Liao L; Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Xiao X; Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Jiang C; Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Hu W; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Wang J; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Li J; Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
Small ; 11(44): 5932-8, 2015 Nov 25.
Article em En | MEDLINE | ID: mdl-26426344
ABSTRACT
A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2 , and multilayered samples are less susceptible than monolayer ones.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article