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Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O3 thin films.
Pintilie, Lucian; Ghica, Corneliu; Teodorescu, Cristian Mihail; Pintilie, Ioana; Chirila, Cristina; Pasuk, Iuliana; Trupina, Lucian; Hrib, Luminita; Boni, Andra Georgia; Georgiana Apostol, Nicoleta; Abramiuc, Laura Elena; Negrea, Raluca; Stefan, Mariana; Ghica, Daniela.
Afiliação
  • Pintilie L; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Ghica C; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Teodorescu CM; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Pintilie I; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Chirila C; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Pasuk I; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Trupina L; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Hrib L; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Boni AG; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Georgiana Apostol N; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Abramiuc LE; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Negrea R; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Stefan M; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
  • Ghica D; National Institute of Materials Physics, Atomistilor 105 bis, Magurele, 077125, Romania.
Sci Rep ; 5: 14974, 2015 Oct 08.
Article em En | MEDLINE | ID: mdl-26446442
The compensation of the depolarization field in ferroelectric layers requires the presence of a suitable amount of charges able to follow any variation of the ferroelectric polarization. These can be free carriers or charged defects located in the ferroelectric material or free carriers coming from the electrodes. Here we show that a self-doping phenomenon occurs in epitaxial, tetragonal ferroelectric films of Pb(Zr0.2Ti0.8)O3, consisting in generation of point defects (vacancies) acting as donors/acceptors. These are introducing free carriers that partly compensate the depolarization field occurring in the film. It is found that the concentration of the free carriers introduced by self-doping increases with decreasing the thickness of the ferroelectric layer, reaching values of the order of 10(26) m(-3) for 10 nm thick films. One the other hand, microscopic investigations show that, for thicknesses higher than 50 nm, the 2O/(Ti+Zr+Pb) atomic ratio increases with the thickness of the layers. These results suggest that the ratio between the oxygen and cation vacancies varies with the thickness of the layer in such a way that the net free carrier density is sufficient to efficiently compensate the depolarization field and to preserve the outward direction of the polarization.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article