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Vertically Integrated Multiple Nanowire Field Effect Transistor.
Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu.
Afiliação
  • Lee BH; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Kang MH; Department of Memory Business, Samsung Electronics , San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, Republic of Korea.
  • Ahn DC; Department of Nano-process, National Nanofab Center (NNFC) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Park JY; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Bang T; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Jeon SB; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Hur J; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Lee D; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
  • Choi YK; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
Nano Lett ; 15(12): 8056-61, 2015 Dec 09.
Article em En | MEDLINE | ID: mdl-26544156
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article