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Interaction-Driven Metal-Insulator Transition in Strained Graphene.
Tang, Ho-Kin; Laksono, E; Rodrigues, J N B; Sengupta, P; Assaad, F F; Adam, S.
Afiliação
  • Tang HK; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
  • Laksono E; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
  • Rodrigues JN; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
  • Sengupta P; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
  • Assaad FF; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
  • Adam S; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
Phys Rev Lett ; 115(18): 186602, 2015 Oct 30.
Article em En | MEDLINE | ID: mdl-26565484
ABSTRACT
The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between π electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that, without strain, graphene remains metallic and changing the substrate from SiO_{2} to suspended samples hardly makes any difference. In contrast, applying a rather large-but experimentally realistic-uniform and isotropic strain of about 15% seems to be a promising route to making graphene an antiferromagnetic Mott insulator.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2015 Tipo de documento: Article