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Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics.
Torricelli, Fabrizio; Ghittorelli, Matteo; Smits, Edsger C P; Roelofs, Christian W S; Janssen, René A J; Gelinck, Gerwin H; Kovács-Vajna, Zsolt M; Cantatore, Eugenio.
Afiliação
  • Torricelli F; Department of Information Engineering, University of Brescia, via Branze 38, 25123, Brescia, Italy.
  • Ghittorelli M; Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600, MB, Eindhoven, The Netherlands.
  • Smits EC; Department of Information Engineering, University of Brescia, via Branze 38, 25123, Brescia, Italy.
  • Roelofs CW; TNO/Holst Centre, High Tech Campus 4, 5656, AE, Eindhoven, The Netherlands.
  • Janssen RA; Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600, MB, Eindhoven, The Netherlands.
  • Gelinck GH; Philips Research Laboratories, High Tech Campus 4, 5656, AE, Eindhoven, The Netherlands.
  • Kovács-Vajna ZM; Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600, MB, Eindhoven, The Netherlands.
  • Cantatore E; Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600, MB, Eindhoven, The Netherlands.
Adv Mater ; 28(2): 284-90, 2016 Jan 13.
Article em En | MEDLINE | ID: mdl-26573767
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10(5) are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article