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Band gap opening and semiconductor-metal phase transition in (n, n) single-walled carbon nanotubes with distinctive boron-nitrogen line defect.
Qiu, Ming; Xie, Yuanyuan; Gao, Xianfeng; Li, Jianyang; Deng, Yelin; Guan, Dongsheng; Ma, Lulu; Yuan, Chris.
Afiliação
  • Qiu M; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu and School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China.
  • Xie Y; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
  • Gao X; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
  • Li J; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
  • Deng Y; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
  • Guan D; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
  • Ma L; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
  • Yuan C; Department of Mechanical Engineering, University of Wisconsin Milwaukee, Wisconsin 53211, USA. cyuan@uwm.edu.
Phys Chem Chem Phys ; 18(6): 4643-51, 2016 Feb 14.
Article em En | MEDLINE | ID: mdl-26794602
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article