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Photothermoelectric Effects in Nanoporous Silicon.
Lai, Yu-Sheng; Tsai, Chao-Yang; Chang, Chin-Kai; Huang, Cheng-Yin; Hsiao, Vincent K S; Su, Yuhlong Oliver.
Afiliação
  • Lai YS; National Nano Device Laboratories, National Applied Research Laboratories, 26, Prosperity Road I, Hsinchu, 30078, Taiwan.
  • Tsai CY; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
  • Chang CK; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
  • Huang CY; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
  • Hsiao VK; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
  • Su YO; Department of Applied Chemistry, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
Adv Mater ; 28(13): 2644-8, 2016 Apr 06.
Article em En | MEDLINE | ID: mdl-26821828
ABSTRACT
The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article