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Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi(1-x)Mn(x))2Se3.
Sánchez-Barriga, J; Varykhalov, A; Springholz, G; Steiner, H; Kirchschlager, R; Bauer, G; Caha, O; Schierle, E; Weschke, E; Ünal, A A; Valencia, S; Dunst, M; Braun, J; Ebert, H; Minár, J; Golias, E; Yashina, L V; Ney, A; Holý, V; Rader, O.
Afiliação
  • Sánchez-Barriga J; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Varykhalov A; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Springholz G; Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz, Austria.
  • Steiner H; Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz, Austria.
  • Kirchschlager R; Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz, Austria.
  • Bauer G; Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz, Austria.
  • Caha O; Department of Condensed Matter Physics, CEITEC, Masaryk University, Kotlarska 2, 61137 Brno, Czech Republic.
  • Schierle E; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Weschke E; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Ünal AA; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Valencia S; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Dunst M; Department Chemie, Ludwig-Maximilians-Universität München, Butenandtstr. 5-13, 81377 München, Germany.
  • Braun J; Department Chemie, Ludwig-Maximilians-Universität München, Butenandtstr. 5-13, 81377 München, Germany.
  • Ebert H; Department Chemie, Ludwig-Maximilians-Universität München, Butenandtstr. 5-13, 81377 München, Germany.
  • Minár J; Department Chemie, Ludwig-Maximilians-Universität München, Butenandtstr. 5-13, 81377 München, Germany.
  • Golias E; New Technologies Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen, Czech Republic.
  • Yashina LV; Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
  • Ney A; Department of Chemistry, Moscow State University, Leninskie Gory 1/3, 119991 Moscow, Russia.
  • Holý V; Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenbergerstr. 69, 4040 Linz, Austria.
  • Rader O; Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic.
Nat Commun ; 7: 10559, 2016 Feb 19.
Article em En | MEDLINE | ID: mdl-26892831
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi(1-x)Mn(x))2Se3 is a prototypical magnetic topological insulator with a pronounced surface band gap of ∼100 meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article