Inhibition of unintentional extra carriers by Mn valence change for high insulating devices.

Guo, Daoyou; Li, Peigang; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Tang, Weihua

Guo, Daoyou; Li, Peigang; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Tang, Weihua.

Afiliação

Guo D; Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Li P; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Wu Z; Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Cui W; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Zhao X; Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Lei M; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Li L; Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Tang W; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.

Sci Rep ; 6: 24190, 2016 Apr 12.

Article em En | MEDLINE | ID: mdl-27068227

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article