III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors.
Opt Express
; 24(8): 8480-90, 2016 Apr 18.
Article
em En
| MEDLINE
| ID: mdl-27137286
ABSTRACT
2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 µm wavelength and dark current of 10 nA at -0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at -0.5 V. The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device. The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2016
Tipo de documento:
Article