Probing Quantum Capacitance in a 3D Topological Insulator.

Kozlov, D A; Bauer, D; Ziegler, J; Fischer, R; Savchenko, M L; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Weiss, D

Kozlov, D A; Bauer, D; Ziegler, J; Fischer, R; Savchenko, M L; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Weiss, D.

Afiliação

Kozlov DA; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
Bauer D; Novosibirsk State University, Novosibirsk 630090, Russia.
Ziegler J; Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.
Fischer R; Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.
Savchenko ML; Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.
Kvon ZD; Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.
Mikhailov NN; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
Dvoretsky SA; Novosibirsk State University, Novosibirsk 630090, Russia.
Weiss D; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.

Phys Rev Lett ; 116(16): 166802, 2016 Apr 22.

Article em En | MEDLINE | ID: mdl-27152818

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article