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Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.
Mehonic, Adnan; Buckwell, Mark; Montesi, Luca; Munde, Manveer Singh; Gao, David; Hudziak, Stephen; Chater, Richard J; Fearn, Sarah; McPhail, David; Bosman, Michel; Shluger, Alexander L; Kenyon, Anthony J.
Afiliação
  • Mehonic A; Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK. a.mehonic@ee.ucl.ac.uk.
  • Buckwell M; Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
  • Montesi L; Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
  • Munde MS; Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
  • Gao D; Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore, 138634.
  • Hudziak S; Department of Physics and Astronomy and London Centre for Nanotechnology, UCL, Gower Street, London, WC1E 6BT, UK.
  • Chater RJ; Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
  • Fearn S; Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
  • McPhail D; Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
  • Bosman M; Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
  • Shluger AL; Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore, 138634.
  • Kenyon AJ; Department of Physics and Astronomy and London Centre for Nanotechnology, UCL, Gower Street, London, WC1E 6BT, UK.
Adv Mater ; 28(34): 7486-93, 2016 Sep.
Article em En | MEDLINE | ID: mdl-27334656
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article