Role of hydrogen in volatile behaviour of defects in SiO<sub>2</sub>-based electronic devices.

Wimmer, Yannick; El-Sayed, Al-Moatasem; Gös, Wolfgang; Grasser, Tibor; Shluger, Alexander L

Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices.

Wimmer, Yannick; El-Sayed, Al-Moatasem; Gös, Wolfgang; Grasser, Tibor; Shluger, Alexander L.

Afiliação

Wimmer Y; Institute for Microelectronics , Vienna University of Technology , Gußhausstraße 27-29/E360, 1040 Wien, Austria.
El-Sayed AM; Institute for Microelectronics, Vienna University of Technology, Gußhausstraße 27-29/E360, 1040 Wien, Austria; Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, UK.
Gös W; Institute for Microelectronics , Vienna University of Technology , Gußhausstraße 27-29/E360, 1040 Wien, Austria.
Grasser T; Institute for Microelectronics , Vienna University of Technology , Gußhausstraße 27-29/E360, 1040 Wien, Austria.
Shluger AL; Department of Physics and Astronomy and London Centre for Nanotechnology , University College London , Gower Street, London WC1E 6BT, UK.

Proc Math Phys Eng Sci ; 472(2190): 20160009, 2016 Jun.

Article em En | MEDLINE | ID: mdl-27436969

Palavras-chave

NBTI; RTN; multiscale modelling; silica defects

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article