Graphene-ß-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application.
Adv Mater
; 28(48): 10725-10731, 2016 Dec.
Article
em En
| MEDLINE
| ID: mdl-27748975
ABSTRACT
A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (ß-Ga2 O3 ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Diagnostic_studies
Idioma:
En
Ano de publicação:
2016
Tipo de documento:
Article