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Graphene-ß-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application.
Kong, Wei-Yu; Wu, Guo-An; Wang, Kui-Yuan; Zhang, Teng-Fei; Zou, Yi-Feng; Wang, Dan-Dan; Luo, Lin-Bao.
Afiliação
  • Kong WY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
  • Wu GA; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
  • Wang KY; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
  • Zhang TF; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
  • Zou YF; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
  • Wang DD; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
  • Luo LB; School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
Adv Mater ; 28(48): 10725-10731, 2016 Dec.
Article em En | MEDLINE | ID: mdl-27748975
ABSTRACT
A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (ß-Ga2 O3 ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Ano de publicação: 2016 Tipo de documento: Article