Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane.
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; 13(7)2017 02.
Article
em En
| MEDLINE
| ID: mdl-27925390
ABSTRACT
Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS2 ) on hexagonal boron nitride (h-BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS2 domains on the basal plane of h-BN by a low-pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS2 and h-BN basal plane are present. Domains with same orientation stitch and form single-crystal, domains with different orientations stitch and from mirror grain boundaries. In this way, the grain boundary is minimized and a continuous film stitched by these two types of domains with only mirror grain boundaries is obtained. This growth strategy is also applicable to other 2D materials growth.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2017
Tipo de documento:
Article