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Development of plasma assisted thermal vapor deposition technique for high-quality thin film.
Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae.
Afiliação
  • Lee KI; Plasma Technology Research Center, National Fusion Research Institute (NFRI), 37, Dongjangsan-Ro, Gunsan-Si, Jeollabuk-Do 573-540, South Korea.
  • Choi YS; Plasma Technology Research Center, National Fusion Research Institute (NFRI), 37, Dongjangsan-Ro, Gunsan-Si, Jeollabuk-Do 573-540, South Korea.
  • Park HJ; Plasma Technology Research Center, National Fusion Research Institute (NFRI), 37, Dongjangsan-Ro, Gunsan-Si, Jeollabuk-Do 573-540, South Korea.
Rev Sci Instrum ; 87(12): 123501, 2016 Dec.
Article em En | MEDLINE | ID: mdl-28040975
ABSTRACT
The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq-1 and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article