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Layer-separable and gap-tunable topological insulators.
Chang, Kai-Wei; Ji, Wei; Kaun, Chao-Cheng.
Afiliação
  • Chang KW; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan. kauncc@gate.sinica.edu.tw.
  • Ji W; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China. wji@ruc.edu.cn.
  • Kaun CC; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan. kauncc@gate.sinica.edu.tw.
Phys Chem Chem Phys ; 19(5): 3932-3936, 2017 Feb 01.
Article em En | MEDLINE | ID: mdl-28106187
ABSTRACT
The way in which states of a topological insulator (TI) transform from monolayer to bulk is an important issue for applications in spintronics. However, unlike graphite, most layered materials are difficult to exfoliate. Using first-principles calculations, we predict that thallium selenide (TlSe) will be a layered TI with rather weak interlayer coupling and thus it should be exfoliated easily. The evolution of the topological states can also be driven by doping with indium (In) atoms or applying lateral strains. A comparison of TlSe and ß-InSe shows that the influences of structural and chemical components on the electronic structures determine the topological phase. Effects of van der Waals interactions in this TlSe material are also addressed.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article