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In Situ Patterning of Ultrasharp Dopant Profiles in Silicon.
Cooil, Simon P; Mazzola, Federico; Klemm, Hagen W; Peschel, Gina; Niu, Yuran R; Zakharov, Alexei A; Simmons, Michelle Y; Schmidt, Thomas; Evans, D Andrew; Miwa, Jill A; Wells, Justin W.
Afiliação
  • Cooil SP; Department of Physics, Norwegian University of Science and Technology (NTNU) , N-7491 Trondheim, Norway.
  • Mazzola F; Department of Physics, Aberystwyth University , SY23 3BZ Aberystwyth, United Kingdom.
  • Klemm HW; Department of Physics, Norwegian University of Science and Technology (NTNU) , N-7491 Trondheim, Norway.
  • Peschel G; School of Physics and Astronomy (SUPA), University of St. Andrews , St. Andrews, Fife KY16 9SS, United Kingdom.
  • Niu YR; Fritz-Harber-Insitute Max-Planck Society , Faradayweg 4-6 14195 Berlin, Germany.
  • Zakharov AA; Fritz-Harber-Insitute Max-Planck Society , Faradayweg 4-6 14195 Berlin, Germany.
  • Simmons MY; MAX IV Laboratory, Lund University , 221 00 Lund, Sweden.
  • Schmidt T; MAX IV Laboratory, Lund University , 221 00 Lund, Sweden.
  • Evans DA; Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales , Sydney, New South Wales 2052, Australia.
  • Miwa JA; Fritz-Harber-Insitute Max-Planck Society , Faradayweg 4-6 14195 Berlin, Germany.
  • Wells JW; Department of Physics, Aberystwyth University , SY23 3BZ Aberystwyth, United Kingdom.
ACS Nano ; 11(2): 1683-1688, 2017 02 28.
Article em En | MEDLINE | ID: mdl-28182399
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article