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p-Type transition-metal doping of large-area MoS2 thin films grown by chemical vapor deposition.
Xu, E Z; Liu, H M; Park, K; Li, Z; Losovyj, Y; Starr, M; Werbianskyj, M; Fertig, H A; Zhang, S X.
Afiliação
  • Xu EZ; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
  • Liu HM; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
  • Park K; Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA.
  • Li Z; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
  • Losovyj Y; Department of Chemistry, Indiana University, Bloomington, IN 47405, USA.
  • Starr M; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
  • Werbianskyj M; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
  • Fertig HA; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
  • Zhang SX; Department of Physics, Indiana University, Bloomington, IN 47405, USA. sxzhang@indiana.edu.
Nanoscale ; 9(10): 3576-3584, 2017 Mar 09.
Article em En | MEDLINE | ID: mdl-28246665
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article