Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories.
Ultramicroscopy
; 183: 94-98, 2017 12.
Article
em En
| MEDLINE
| ID: mdl-28390735
ABSTRACT
HfO2-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO2 interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 µm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays. Analysis of the local Hf 4f, O 1s and Ti 2p core level spectra yields valuable information on the chemistry of the forming process in a single device, and in particular the central role of oxygen vacancies thanks to the spectromicroscopic approach.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2017
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Article