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Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.
Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee.
Afiliação
  • Tan WC; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
  • Cai Y; Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
  • Ng RJ; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
  • Huang L; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
  • Feng X; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
  • Zhang G; Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
  • Zhang YW; Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
  • Nijhuis CA; Department of Chemistry, NUS, 3 Science Drive 3, 117543, Singapore.
  • Liu X; College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China.
  • Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
Adv Mater ; 29(24)2017 Jun.
Article em En | MEDLINE | ID: mdl-28401603
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article