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Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size.
Hiller, Daniel; López-Vidrier, Julian; Gutsch, Sebastian; Zacharias, Margit; Nomoto, Keita; König, Dirk.
Afiliação
  • Hiller D; Laboratory for Nanotechnology, Dept. of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany. daniel.hiller@imtek.uni-freiburg.de.
  • López-Vidrier J; Laboratory for Nanotechnology, Dept. of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany.
  • Gutsch S; Laboratory for Nanotechnology, Dept. of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany.
  • Zacharias M; Laboratory for Nanotechnology, Dept. of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany.
  • Nomoto K; School of Photovoltaic and Renewable Energy Engineering (SPREE), University of New South Wales (UNSW), Sydney, Australia.
  • König D; Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, Australia.
Sci Rep ; 7(1): 863, 2017 04 13.
Article em En | MEDLINE | ID: mdl-28408757
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article