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Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
Tseng, Alex C; Lynall, David; Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.
Afiliação
  • Tseng AC; Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, ON M5S 3E4, Canada. alexc.tseng@mail.utoronto.ca.
  • Lynall D; Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON M5S 3E4, Canada. alexc.tseng@mail.utoronto.ca.
  • Savelyev I; Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, ON M5S 3E4, Canada. david.lynall@mail.utoronto.ca.
  • Blumin M; Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON M5S 3E4, Canada. david.lynall@mail.utoronto.ca.
  • Wang S; Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, ON M5S 3E4, Canada. igor.saveliev@utoronto.ca.
  • Ruda HE; Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, ON M5S 3E4, Canada. marina.blumin@utoronto.ca.
Sensors (Basel) ; 17(7)2017 Jul 16.
Article em En | MEDLINE | ID: mdl-28714903
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article