Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.
Opt Express
; 25(14): 15818-15827, 2017 Jul 10.
Article
em En
| MEDLINE
| ID: mdl-28789094
ABSTRACT
We report the demonstration of a germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 µm-wavelength light detection. Characterization of the photodetector in both direct current (DC) and radio frequency (RF) regimes was performed. At the bias voltage of -1 V, a dark current density of 0.031 A/cm2 is realized at room-temperature, which is among the lowest reported values for Ge1-xSnx-on-Si p-i-n photodiodes. In addition, for the first time, a 3 dB bandwidth (f3dB) of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2 µm. It is anticipated that further device optimization would extend the f3dB to above 10 GHz.
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MEDLINE
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En
Ano de publicação:
2017
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Article