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Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride.
He, Daowei; Qiao, Jingsi; Zhang, Linglong; Wang, Junya; Lan, Tu; Qian, Jun; Li, Yun; Shi, Yi; Chai, Yang; Lan, Wei; Ono, Luis K; Qi, Yabing; Xu, Jian-Bin; Ji, Wei; Wang, Xinran.
Afiliação
  • He D; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Qiao J; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China.
  • Zhang L; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China.
  • Wang J; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Lan T; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Qian J; School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China.
  • Li Y; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Shi Y; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Chai Y; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Lan W; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Ono LK; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China.
  • Qi Y; School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China.
  • Xu JB; Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Kunigami-gun, Onna-son, Okinawa 904-0495, Japan.
  • Ji W; Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Kunigami-gun, Onna-son, Okinawa 904-0495, Japan.
  • Wang X; Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
Sci Adv ; 3(9): e1701186, 2017 09.
Article em En | MEDLINE | ID: mdl-28913429
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2017 Tipo de documento: Article