Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.
Opt Express
; 24(5): 4519-4531, 2016 Mar 07.
Article
em En
| MEDLINE
| ID: mdl-29092279
ABSTRACT
Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 109 cmHz1/2W-1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Diagnostic_studies
Idioma:
En
Ano de publicação:
2016
Tipo de documento:
Article