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Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.
Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D.
Afiliação
  • Oltscher M; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
  • Eberle F; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
  • Kuczmik T; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
  • Bayer A; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
  • Schuh D; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
  • Bougeard D; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
  • Ciorga M; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany. mariusz.ciorga@ur.de.
  • Weiss D; Institute for Experimental and Applied Physics, University of Regensburg, 93055, Regensburg, Germany.
Nat Commun ; 8(1): 1807, 2017 11 27.
Article em En | MEDLINE | ID: mdl-29176607
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article