Your browser doesn't support javascript.
loading
Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS2 and Yttrium Iron Garnet.
Peng, Bo; Li, Qi; Liang, Xiao; Song, Peng; Li, Jian; He, Keliang; Fu, Deyi; Li, Yue; Shen, Chao; Wang, Hailong; Wang, Chuangtang; Liu, Tao; Zhang, Li; Lu, Haipeng; Wang, Xin; Zhao, Jianhua; Xie, Jianliang; Wu, Mingzhong; Bi, Lei; Deng, Longjiang; Loh, Kian Ping.
Afiliação
  • Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Li Q; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Liang X; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Song P; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543.
  • Li J; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • He K; IBM , Malta, New York 12020, United States.
  • Fu D; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543.
  • Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Shen C; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
  • Wang H; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
  • Wang C; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Liu T; Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States.
  • Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Wang X; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Zhao J; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
  • Xie J; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Wu M; Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States.
  • Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China.
  • Loh KP; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543.
ACS Nano ; 11(12): 12257-12265, 2017 12 26.
Article em En | MEDLINE | ID: mdl-29182851
ABSTRACT
Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D TMDCs) exhibit an emerging valley pseudospin, in which spin-up (-down) electrons are distributed in a +K (-K) valley. This valley polarization gives a DOF for spintronic and valleytronic devices. Recently, magnetic exchange interactions between graphene and magnetic insulator yttrium iron garnet (YIG) have been exploited. However, the physics of 2D TMDCs with YIG have not been shown before. Here we demonstrate strong many-body effects in a heterostructure geometry comprising a MoS2 monolayer and YIG. High-order trions are directly identified by mapping absorption and photoluminescence at 12 K. The electron doping density is up to ∼1013 cm-2, resulting in a large splitting of ∼40 meV between trions and excitons. The trions exhibit a high circular polarization of ∼80% under optical pumping by circularly polarized light at ∼1.96 eV; it is confirmed experimentally that both phonon scattering and electron-hole exchange interaction contribute to the valley depolarization with temperature; importantly, a magnetoresistance (MR) behavior in the MoS2 monolayer was observed, and a giant MR ratio of ∼30% is achieved, which is 1 order of magnitude larger than the reported ratio in MoS2/CoFe2O4 heterostructures. Our experimental results confirm that the giant MR behaviors are attributed to the interfacial spin accumulation due to YIG substrates. Our work provides an insight into spin manipulation in a heterostructure of monolayer materials and magnetic substrates.
Palavras-chave

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article