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Centimeter-Long Single-Crystalline Si Nanowires.
Zhang, Bing-Chang; Wang, Hui; He, Le; Zheng, Cai-Jun; Jie, Jian-Sheng; Lifshitz, Yeshayahu; Lee, Shuit-Tong; Zhang, Xiao-Hong.
Afiliação
  • Zhang BC; Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing, 100190, People's Republic of China.
  • Wang H; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China.
  • He L; Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing, 100190, People's Republic of China.
  • Zheng CJ; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China.
  • Jie JS; Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing, 100190, People's Republic of China.
  • Lifshitz Y; School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC) , Chengdu 610054, People's Republic of China.
  • Lee ST; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China.
  • Zhang XH; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Carbon-Based Functional Materials and Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China.
Nano Lett ; 17(12): 7323-7329, 2017 12 13.
Article em En | MEDLINE | ID: mdl-29185771
ABSTRACT
The elongation of free-standing one-dimensional (1D) functional nanostructures into lengths above the millimeter range has brought new practical applications as they combine the remarkable properties of nanostructured materials with macroscopic lengths. However, it remains a big challenge to prepare 1D silicon nanostructures, one of the most important 1D nanostructures, with lengths above the millimeter range. Here we report the unprecedented preparation of ultralong single-crystalline Si nanowires with length up to 2 cm, which can function as the smallest active material to facilitate the miniaturization of macroscopic devices. These ultralong Si nanowires with augmented flexibility are of emerging interest for flexible electronics. We also demonstrate the first single-nanowire-based wearable joint motion sensor with superior performance to reported systems, which just represents one example of novel devices that can be built from these nanowires. The preparation of ultralong Si nanowires will stimulate the fabrication and miniaturization of electric, optical, medical, and mechanical devices to impact the semiconductor industry and our daily life in the near future.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article