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Response of the Lattice across the Filling-Controlled Mott Metal-Insulator Transition of a Rare Earth Titanate.
Kim, Honggyu; Marshall, Patrick B; Ahadi, Kaveh; Mates, Thomas E; Mikheev, Evgeny; Stemmer, Susanne.
Afiliação
  • Kim H; Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
  • Marshall PB; Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
  • Ahadi K; Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
  • Mates TE; Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
  • Mikheev E; Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
  • Stemmer S; Materials Department, University of California, Santa Barbara, California 93106-5050, USA.
Phys Rev Lett ; 119(18): 186803, 2017 Nov 03.
Article em En | MEDLINE | ID: mdl-29219551
ABSTRACT
The lattice response of a prototype Mott insulator, SmTiO_{3}, to hole doping is investigated with atomic-scale spatial resolution. SmTiO_{3} films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO_{3}-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision. We show that these distortions are gradually and uniformly reduced as the Sr concentration is increased without any phase separation. Significant distortions persist into the metallic state. The results present a new picture of the physics of this prototype filling-controlled MIT, which is discussed.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article