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Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts.
Avsar, Ahmet; Marinov, Kolyo; Marin, Enrique Gonzalez; Iannaccone, Giuseppe; Watanabe, Kenji; Taniguchi, Takashi; Fiori, Gianluca; Kis, Andras.
Afiliação
  • Avsar A; Electrical Engineering Institute, Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Marinov K; Electrical Engineering Institute, Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
  • Marin EG; Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa, 56122, Italy.
  • Iannaccone G; Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa, 56122, Italy.
  • Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Taniguchi T; Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Fiori G; Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa, 56122, Italy.
  • Kis A; Electrical Engineering Institute, Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland.
Adv Mater ; 30(18): e1707200, 2018 May.
Article em En | MEDLINE | ID: mdl-29569298
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article