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A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements.
Liu, Yantao; Ren, Wei; Shi, Peng; Liu, Dan; Zhang, Yijun; Liu, Ming; Ye, Zuo-Guang; Jing, Weixuan; Tian, Bian; Jiang, Zhuangde.
Afiliação
  • Liu Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. liuyt8115@stu.xjtu.edu.cn.
  • Ren W; Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China. liuyt8115@stu.xjtu.edu.cn.
  • Shi P; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. wren@mail.xjtu.edu.cn.
  • Liu D; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. spxjy@mail.xjtu.edu.cn.
  • Zhang Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. liudan235@stu.xjtu.edu.cn.
  • Liu M; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. zhangyj518@mail.xjtu.edu.cn.
  • Ye ZG; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. mingliu@mail.xjtu.edu.cn.
  • Jing W; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China. zye@sfu.ca.
  • Tian B; Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, BC V5A 1S6, Canada. zye@sfu.ca.
  • Jiang Z; International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University, Xi'an 710049, China. wxjing@mail.xjtu.edu.cn.
Sensors (Basel) ; 18(4)2018 Mar 23.
Article em En | MEDLINE | ID: mdl-29570680
An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 µV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article