Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.
Phys Rev Lett
; 120(13): 137702, 2018 Mar 30.
Article
em En
| MEDLINE
| ID: mdl-29694195
ABSTRACT
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2018
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Article