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Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.
Liu, Yuan; Guo, Jian; Zhu, Enbo; Liao, Lei; Lee, Sung-Joon; Ding, Mengning; Shakir, Imran; Gambin, Vincent; Huang, Yu; Duan, Xiangfeng.
Afiliação
  • Liu Y; Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA.
  • Guo J; State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, and School of Physics and Electronics, Hunan University, Changsha, China.
  • Zhu E; Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA.
  • Liao L; Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA.
  • Lee SJ; State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, and School of Physics and Electronics, Hunan University, Changsha, China.
  • Ding M; Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA.
  • Shakir I; Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA.
  • Gambin V; Sustainable Energy Technologies Centre, College of Engineering, King Saud University, Riyadh, Saudi Arabia.
  • Huang Y; NG NEXT, Northrop Grumman Corporation, Redondo Beach, CA, USA.
  • Duan X; Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA. yhuang@seas.ucla.edu.
Nature ; 557(7707): 696-700, 2018 05.
Article em En | MEDLINE | ID: mdl-29769729
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article
Texto completo
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PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article