Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors.

Cui, Peng; Mo, Jianghui; Fu, Chen; Lv, Yuanjie; Liu, Huan; Cheng, Aijie; Luan, Chongbiao; Zhou, Yang; Dai, Gang; Lin, Zhaojun

Cui, Peng; Mo, Jianghui; Fu, Chen; Lv, Yuanjie; Liu, Huan; Cheng, Aijie; Luan, Chongbiao; Zhou, Yang; Dai, Gang; Lin, Zhaojun.

Afiliação

Cui P; School of Microelectronics, Shandong University, Jinan, 250100, China.
Mo J; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
Fu C; School of Microelectronics, Shandong University, Jinan, 250100, China.
Lv Y; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
Liu H; School of Mathematics, Shandong University, Jinan, 250100, China.
Cheng A; School of Mathematics, Shandong University, Jinan, 250100, China.
Luan C; Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, Mianyang, 621999, China.
Zhou Y; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610200, China.
Dai G; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610200, China.
Lin Z; School of Microelectronics, Shandong University, Jinan, 250100, China. linzj@sdu.edu.cn.

Sci Rep ; 8(1): 9036, 2018 Jun 13.

Article em En | MEDLINE | ID: mdl-29899499

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article