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Power Dissipation of WSe2 Field-Effect Transistors Probed by Low-Frequency Raman Thermometry.
Behranginia, Amirhossein; Hemmat, Zahra; Majee, Arnab K; Foss, Cameron J; Yasaei, Poya; Aksamija, Zlatan; Salehi-Khojin, Amin.
Afiliação
  • Behranginia A; Department of Mechanical and Industrial Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States.
  • Hemmat Z; Department of Mechanical and Industrial Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States.
  • Majee AK; Electrical and Computer Engineering Department , University of Massachusetts Amherst , Amherst , Massachusetts 01003 , United States.
  • Foss CJ; Electrical and Computer Engineering Department , University of Massachusetts Amherst , Amherst , Massachusetts 01003 , United States.
  • Yasaei P; Department of Mechanical and Industrial Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States.
  • Aksamija Z; Electrical and Computer Engineering Department , University of Massachusetts Amherst , Amherst , Massachusetts 01003 , United States.
  • Salehi-Khojin A; Department of Mechanical and Industrial Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States.
ACS Appl Mater Interfaces ; 10(29): 24892-24898, 2018 Jul 25.
Article em En | MEDLINE | ID: mdl-29952201
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article