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Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication.
Kusaka, Yasuyuki; Shirakawa, Naoki; Ogura, Shintaro; Leppäniemi, Jaakko; Sneck, Asko; Alastalo, Ari; Ushijima, Hirobumi; Fukuda, Nobuko.
Afiliação
  • Kusaka Y; Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan.
  • Shirakawa N; Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan.
  • Ogura S; Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan.
  • Leppäniemi J; VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland.
  • Sneck A; VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland.
  • Alastalo A; VTT Technical Research Centre of Finland Ltd. , Tietotie 3 , Espoo FI-02150 , Finland.
  • Ushijima H; Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan.
  • Fukuda N; Flexible Electronics Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi , Tsukuba , Ibaraki 305-8565 , Japan.
ACS Appl Mater Interfaces ; 10(29): 24339-24343, 2018 Jul 25.
Article em En | MEDLINE | ID: mdl-29972298
ABSTRACT
The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO x and a plasma-protecting layer of ZrO x situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article