Steep Switching of In<sub>0.18</sub>Al<sub>0.82</sub>N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications .

Chen, Pin-Guang; Chen, Kuan-Ting; Tang, Ming; Wang, Zheng-Ying; Chou, Yu-Chen; Lee, Min-Hung

Steep Switching of In_0.18Al_0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications .

Chen, Pin-Guang; Chen, Kuan-Ting; Tang, Ming; Wang, Zheng-Ying; Chou, Yu-Chen; Lee, Min-Hung.

Afiliação

Chen PG; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan.
Chen KT; National Nano Device Laboratories, Hsinchu 30078, Taiwan.
Tang M; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan.
Wang ZY; Device Design Division, PTEK Technology Co., Ltd., Hsinchu 30059, Taiwan.
Chou YC; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan.
Lee MH; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan.

Sensors (Basel) ; 18(9)2018 Aug 24.

Article em En | MEDLINE | ID: mdl-30149580

Palavras-chave

InAlN; high-electron-mobility transistor (HEMT); swing; wafer-scale

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article