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DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure.
Kwak, Hyeon-Tak; Jang, Kyu-Won; Kim, Hyun-Jung; Lee, Sang-Heung; Lim, Jong-Won; Kim, Hyun-Seok.
Afiliação
  • Kwak HT; Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea.
  • Jang KW; Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea.
  • Kim HJ; Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea.
  • Lee SH; Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea.
  • Lim JW; Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea.
  • Kim HS; Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea.
J Nanosci Nanotechnol ; 19(4): 2319-2322, 2019 Apr 01.
Article em En | MEDLINE | ID: mdl-30486991
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article