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Structural and thermodynamic limits of layer thickness in 2D halide perovskites.
Soe, Chan Myae Myae; Nagabhushana, G P; Shivaramaiah, Radha; Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe; Melkonyan, Ferdinand; Cao, Duyen H; Traoré, Boubacar; Pedesseau, Laurent; Kepenekian, Mikaël; Katan, Claudine; Even, Jacky; Marks, Tobin J; Navrotsky, Alexandra; Mohite, Aditya D; Stoumpos, Constantinos C; Kanatzidis, Mercouri G.
Afiliação
  • Soe CMM; Department of Chemistry, Northwestern University, Evanston, IL 60208.
  • Nagabhushana GP; Argonne-Northwestern Solar Energy Research Center, Northwestern University, Evanston, IL 60208.
  • Shivaramaiah R; Peter A. Rock Thermochemistry Laboratory, University of California, Davis, CA 95616.
  • Tsai H; Nanomaterials in the Environment, Agriculture, and Technology Organized Research Unit, University of California, Davis, CA 95616.
  • Nie W; Peter A. Rock Thermochemistry Laboratory, University of California, Davis, CA 95616.
  • Blancon JC; Nanomaterials in the Environment, Agriculture, and Technology Organized Research Unit, University of California, Davis, CA 95616.
  • Melkonyan F; Material Synthesis and Integrated Devices, MPA-11, Los Alamos National Laboratory, Los Alamos, NM 87545.
  • Cao DH; Material Synthesis and Integrated Devices, MPA-11, Los Alamos National Laboratory, Los Alamos, NM 87545.
  • Traoré B; Material Synthesis and Integrated Devices, MPA-11, Los Alamos National Laboratory, Los Alamos, NM 87545.
  • Pedesseau L; Department of Chemistry, Northwestern University, Evanston, IL 60208.
  • Kepenekian M; Argonne-Northwestern Solar Energy Research Center, Northwestern University, Evanston, IL 60208.
  • Katan C; Department of Chemistry, Northwestern University, Evanston, IL 60208.
  • Even J; Argonne-Northwestern Solar Energy Research Center, Northwestern University, Evanston, IL 60208.
  • Marks TJ; Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, Rennes F-35000, France.
  • Navrotsky A; Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, Rennes F-35000, France.
  • Mohite AD; Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, Rennes F-35000, France.
  • Stoumpos CC; Univ Rennes, ENSCR, INSA Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, Rennes F-35000, France.
  • Kanatzidis MG; Univ Rennes, INSA Rennes, CNRS, Institut FOTON - UMR 6082, Rennes F-35000, France.
Proc Natl Acad Sci U S A ; 116(1): 58-66, 2019 01 02.
Article em En | MEDLINE | ID: mdl-30563858
ABSTRACT
In the fast-evolving field of halide perovskite semiconductors, the 2D perovskites (A')2(A) n-1M n X3n+1 [where A = Cs+, CH3NH3+, HC(NH2)2+; A' = ammonium cation acting as spacer; M = Ge2+, Sn2+, Pb2+; and X = Cl-, Br-, I-] have recently made a critical entry. The n value defines the thickness of the 2D layers, which controls the optical and electronic properties. The 2D perovskites have demonstrated preliminary optoelectronic device lifetime superior to their 3D counterparts. They have also attracted fundamental interest as solution-processed quantum wells with structural and physical properties tunable via chemical composition, notably by the n value defining the perovskite layer thickness. The higher members (n > 5) have not been documented, and there are important scientific questions underlying fundamental limits for n To develop and utilize these materials in technology, it is imperative to understand their thermodynamic stability, fundamental synthetic limitations, and the derived structure-function relationships. We report the effective synthesis of the highest iodide n-members yet, namely (CH3(CH2)2NH3)2(CH3NH3)5Pb6I19 (n = 6) and (CH3(CH2)2NH3)2(CH3NH3)6Pb7I22 (n = 7), and confirm the crystal structure with single-crystal X-ray diffraction, and provide indirect evidence for "(CH3(CH2)2NH3)2(CH3NH3)8Pb9I28" ("n = 9"). Direct HCl solution calorimetric measurements show the compounds with n > 7 have unfavorable enthalpies of formation (ΔHf), suggesting the formation of higher homologs to be challenging. Finally, we report preliminary n-dependent solar cell efficiency in the range of 9-12.6% in these higher n-members, highlighting the strong promise of these materials for high-performance devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article