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High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.
Li, Mengjiao; Lin, Che-Yi; Yang, Shih-Hsien; Chang, Yuan-Ming; Chang, Jen-Kuei; Yang, Feng-Shou; Zhong, Chaorong; Jian, Wen-Bin; Lien, Chen-Hsin; Ho, Ching-Hwa; Liu, Heng-Jui; Huang, Rong; Li, Wenwu; Lin, Yen-Fu; Chu, Junhao.
Afiliação
  • Li M; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China.
  • Lin CY; Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan.
  • Yang SH; Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan.
  • Chang YM; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Chang JK; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Yang FS; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Zhong C; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China.
  • Jian WB; Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan.
  • Lien CH; Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan.
  • Ho CH; Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 106, Taiwan.
  • Liu HJ; Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Huang R; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China.
  • Li W; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China.
  • Lin YF; Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
  • Chu J; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China.
Adv Mater ; 30(44): e1803690, 2018 Nov.
Article em En | MEDLINE | ID: mdl-30589465
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article
Texto completo
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PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article